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Charge Transport in Low Dimensional Semiconductor Structures

Name: Charge Transport in Low Dimensional Semiconductor Structures
Brand: Springer Nature Switzerland AG
SKU: 25137123
Price: 108.29 EUR
Availability: InStock
Author: Vito Dario Camiola
ISBN: 9783030359928

The Maximum Entropy Approach

Vito Dario Camiola

Giovanni Mascali

Vittorio Romano

Език

Английски език

Книга С твърди корици

Код Либристо: 25137123

Издателство Springer Nature Switzerland AG, март 2020

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopi... Цялото описание

Код Либристо: 25137123

263 b

108.29 €

211.80 лв

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This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.