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Electronic and Vibrational Properties of GeSn and SiGeSn Alloys

Език Английски езикАнглийски език
Книга С меки корици
Книга Electronic and Vibrational Properties of GeSn and  SiGeSn Alloys Vijay D'Costa
Код Либристо: 06823598
Издателство VDM Verlag Dr. Müller, ноември 2008
GeSn and SiGeSn alloys posses an intriguing §potential for IR optoelectronics and photovoltaic §appl... Цялото описание
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GeSn and SiGeSn alloys posses an intriguing §potential for IR optoelectronics and photovoltaic §applications. This book reports a detailed §compositional study of the electronic and §vibrational properties of GeSn and SiGeSn alloys. §The various optical transition energies in the §electronic band structure of the alloys are obtained §by spectroscopic ellipsometry and photoreflectance. §From the analysis, GeSn alloys are predicted to be a §direct gap material for Sn concentration as low as 6-§11 %. The bowing of optical transitions in GeSn and §SiGeSn alloys is found to scale with the atomic size §mismatch and electronegativity difference between §Si, Ge and -Sn. The Raman spectra of GeSn alloys §show two optical modes and two disorder-activated §modes. The Raman spectra of SiGeSn alloys are SiGe §like and the compositional dependence of vibrations §can be expressed in terms of the corresponding §vibrations in the binaries constituting the ternary §alloys. This experimental work should be useful to §scientists and engineers in the semiconductor field §and to anyone who is interested in learning the §basic optical properties of these novel materials. GeSn and SiGeSn alloys posses an intriguing §potential for IR optoelectronics and photovoltaic §applications. This book reports a detailed §compositional study of the electronic and §vibrational properties of GeSn and SiGeSn alloys. §The various optical transition energies in the §electronic band structure of the alloys are obtained §by spectroscopic ellipsometry and photoreflectance. §From the analysis, GeSn alloys are predicted to be a §direct gap material for Sn concentration as low as 6-§11 %. The bowing of optical transitions in GeSn and §SiGeSn alloys is found to scale with the atomic size §mismatch and electronegativity difference between §Si, Ge and -Sn. The Raman spectra of GeSn alloys §show two optical modes and two disorder-activated §modes. The Raman spectra of SiGeSn alloys are SiGe §like and the compositional dependence of vibrations §can be expressed in terms of the corresponding §vibrations in the binaries constituting the ternary §alloys. This experimental work should be useful to §scientists and engineers in the semiconductor field §and to anyone who is interested in learning the §basic optical properties of these novel materials.

Информация за книгата

Пълно заглавие Electronic and Vibrational Properties of GeSn and SiGeSn Alloys
Автор Vijay D'Costa
Език Английски език
Корици Книга - С меки корици
Дата на издаване 2009
Брой страници 176
Баркод 9783639150636
Код Либристо 06823598
Издателство VDM Verlag Dr. Müller
Тегло 281
Размери 150 x 220 x 10
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