Над 4 милиона заглавия на английски и други езици! Открийте новата си история още днес! Безплатна доставка за поръчки над 69.99€

Проверка на състоянието на поръчката

Станете част от общност от любители на книгите от цял свят и получавате много предимства. Създай на безплатен акаунт

Безплатна доставка със Еконт над 69.99 €

Куриер Speedy 3.49 € Пункт на Speedy 3.49 € ЕКОНТ 3.99 € Еконтомат/Офис на Еконт 3.99 € Ekont Box 3.99 € Sameday 3.99 € Sameday box 3.99 € Box Now 3.99 €

Контакт

Как се пазарува?

Помощ

Моят акаунт

▸ Празна :-(

Flash Memories

Name: Flash Memories
Brand: Springer-Verlag New York Inc.
SKU: 06619592
Price: 324.71 EUR
Availability: InStock
Author: Paulo Cappelletti
ISBN: 9781461372783

Език

Английски език

Книга С меки корици

Код Либристо: 06619592

Издателство Springer-Verlag New York Inc., септември 2014

A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology a... Цялото описание

Код Либристо: 06619592

787 b

324.71 €

635.08 лв

Външен склад Изпращаме след 5-8 дни

До 30 дни за връщане на стоки

Клиентите са закупили също

In memoriam Alice Winnová

С твърди корици

17.30 € 33.84 лв

Los carboneros de Francia y reina Sevilla Antonio Mira de Amescua

С меки корици

8.41 € 16.46 лв

Toujours y croire Olivier Giroud

С меки корици

26.18 € 51.21 лв

Jak jíme zdravě v létě

С твърди корици

16.47 € 32.22 лв

Thematische woordenschat Nederlands-Wit-Russisch - 3000 woorden Andrey Taranov

С меки корици

10.33 € 20.20 лв

Léčení barvami Philippa Merivale

С меки корици

8.52 € 16.66 лв

Satyrische und ernsthafte Schriften Jonathan Swift

С меки корици

33.99 € 66.47 лв

Enzyklopädie der Gräser Rick Darke

С твърди корици

93.18 € 182.25 лв

A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].